[Wolfspeed] AllProducts
Lab Instruments & Supplies
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Electronic/Electrical Parts and Controll Equipments
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Wolfspeed 600V 2A, SiC Schottky Diode, 2-Pin TO-220 C3D02060A C3D02060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 690
USD: 4.29
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Wolfspeed 600V 4A, SiC Schottky Diode, 3-Pin DPAK C3D04060E C3D04060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 560
USD: 3.48
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D04060A C3D04060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 490
USD: 3.05
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Wolfspeed 600V 10A, SiC Schottky Diode, 2-Pin TO-220 C3D10060A C3D10060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,100
USD: 6.84
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C2M0080120D SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 6,990
USD: 43.49
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Wolfspeed 1200V 38A, Dual SiC Schottky Diode, 3-Pin TO-247 C4D10120D C4D10120D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 2,120
USD: 13.19
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Wolfspeed 1200V 14A, SiC Schottky Diode, 2-Pin TO-220 C4D10120A C4D10120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,760
USD: 10.95
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Wolfspeed 600V 5A, SiC Schottky Diode, 2-Pin TO-220 C3D03060F C3D03060F
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 830
USD: 5.16
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Wolfspeed 1200V 10A, SiC Schottky Diode, 2-Pin TO-220 C4D02120A C4D02120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 3,100
USD: 19.29
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D02060F C3D02060F
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 2,030
USD: 12.63
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C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 3,730
USD: 23.21
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C2M0025120D SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 21,700
USD: 135.02
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C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 4,470
USD: 27.81
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C2M0080120D SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 200,000
USD: 1,244.40
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C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Silicon Carbide Power MOSFET, C3M Series, Cree Inc
New C3M Silicon Carbide (SiC) MOSFET Technology Drain-to-Source Breakdown Voltage (Full Operating Temperature Range): 1000 V or More New Low Impedance Package (with Driver Source) Drain-to-Source Creepage Distance/Clearance: 8 mm Fast Switching at Low Power Capacitance High Voltage Avalanche Durability with Low ON Resistance Drain-to-Source High Speed Intrinsic Diode with Ultra-Low Reverse Recovery Loss1 products found
JPY: 4,760
USD: 29.62
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D04060A C3D04060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 11,900
USD: 74.04
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Wolfspeed 1200V 4.5A, SiC Schottky Diode, 3-Pin DPAK C4D02120E C4D02120E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 2,970
USD: 18.48
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D02060F C3D02060F
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 10,200
USD: 63.46
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C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range New low-impedance package with driver source 8 mm of creepage/clearance between Drain and Source High-speed switching with low output capacitance High blocking voltage with low Drain-Source On-State Resistance Avalanche ruggedness Fast intrinsic diode with low Reverse Recovery
1 products found
JPY: 144,000
USD: 895.97
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Wolfspeed 600V 4A, SiC Schottky Diode, 3-Pin DPAK C3D04060E C3D04060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 17,700
USD: 110.13
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Wolfspeed 600V 3A, SiC Schottky Diode, 3-Pin DPAK C3D03060E C3D03060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 13,200
USD: 82.13
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Wolfspeed 600V 3A, SiC Schottky Diode, 3-Pin DPAK C3D03060E C3D03060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 550
USD: 3.42
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Wolfspeed 600V 6A, SiC Schottky Diode, 2-Pin TO-220 C3D06060A C3D06060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 20,100
USD: 125.06
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Wolfspeed 600V 6A, SiC Schottky Diode, 2-Pin TO-220 C3D06060A C3D06060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 860
USD: 5.35
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Wolfspeed 600V 6A, SiC Schottky Diode, 3-Pin D2PAK C3D06060G C3D06060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 17,800
USD: 110.75
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Wolfspeed 600V 6A, SiC Schottky Diode, 3-Pin D2PAK C3D06060G C3D06060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 370
USD: 2.30
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Wolfspeed 600V 8A, SiC Schottky Diode, 3-Pin D2PAK C3D08060G C3D08060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 513,000
USD: 3,191.89
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Wolfspeed 1200V 38A, Dual SiC Schottky Diode, 3-Pin TO-247 C4D10120D C4D10120D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 38,700
USD: 240.79
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C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 89,000
USD: 553.76
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C2M0025120D SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 645,000
USD: 4,013.19
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C3M0065090J SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 4,570
USD: 28.44
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C2M1000170J SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 5,350
USD: 33.29
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C3M0280090D SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 34,600
USD: 215.28
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C3M0280090D SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 3,940
USD: 24.52
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C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 59,600
USD: 370.83
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C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 3,140
USD: 19.54
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Wolfspeed 650V 24A, SiC Schottky Diode, 2-Pin TO-220 C3D08065A C3D08065A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,930
USD: 12.01
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Wolfspeed 650V 32A, SiC Schottky Diode, 3-Pin DPAK C3D10065E C3D10065E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 5,950
USD: 37.02
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Wolfspeed 650V 59A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20065D C3D20065D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 37,000
USD: 230.21
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Wolfspeed 650V 59A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20065D C3D20065D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,580
USD: 9.83
