64-1891-76 C2M1000170J SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J
Features
- Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
Spec
- Quantity:1bag(2pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.3 A
- Maximum Drain Source Voltage:1700 V
- Maximum Drain Source Resistance:1.4 Ω
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-10 V, +25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:7
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:78 W
- Number of Elements per Chip:1
- CODE No.:915-8833
| Order No. | 64-1891-76 | |
|---|---|---|
| Model No. | C2M1000170J | |
| Standard price |
JPY: 5,350
USD: 33.29
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
| Stock in Japan |
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| Supplier Stock |
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