[Wolfspeed]List of 【Wolfspeed】RS Componentspreload" href="/en/asone/css/slider.css?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1" as="style">
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C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Silicon Carbide Power MOSFET, C3M Series, Cree Inc
New C3M Silicon Carbide (SiC) MOSFET Technology Drain-to-Source Breakdown Voltage (Full Operating Temperature Range): 1000 V or More New Low Impedance Package (with Driver Source) Drain-to-Source Creepage Distance/Clearance: 8 mm Fast Switching at Low Power Capacitance High Voltage Avalanche Durability with Low ON Resistance Drain-to-Source High Speed Intrinsic Diode with Ultra-Low Reverse Recovery Loss
1 products found
JPY: 4,760
USD: 29.84
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D04060A C3D04060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 11,900
USD: 74.59
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Wolfspeed 1200V 4.5A, SiC Schottky Diode, 3-Pin DPAK C4D02120E C4D02120E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 2,970
USD: 18.62
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D02060F C3D02060F
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 10,200
USD: 63.94
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C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range New low-impedance package with driver source 8 mm of creepage/clearance between Drain and Source High-speed switching with low output capacitance High blocking voltage with low Drain-Source On-State Resistance Avalanche ruggedness Fast intrinsic diode with low Reverse Recovery
1 products found
JPY: 144,000
USD: 902.65
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Wolfspeed 600V 4A, SiC Schottky Diode, 3-Pin DPAK C3D04060E C3D04060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 17,700
USD: 110.95
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Wolfspeed 600V 3A, SiC Schottky Diode, 3-Pin DPAK C3D03060E C3D03060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 13,200
USD: 82.74
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Wolfspeed 600V 3A, SiC Schottky Diode, 3-Pin DPAK C3D03060E C3D03060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 550
USD: 3.45
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Wolfspeed 600V 6A, SiC Schottky Diode, 2-Pin TO-220 C3D06060A C3D06060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 20,100
USD: 126.00
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Wolfspeed 600V 6A, SiC Schottky Diode, 2-Pin TO-220 C3D06060A C3D06060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 860
USD: 5.39
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Wolfspeed 600V 6A, SiC Schottky Diode, 3-Pin D2PAK C3D06060G C3D06060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 17,800
USD: 111.58
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Wolfspeed 600V 6A, SiC Schottky Diode, 3-Pin D2PAK C3D06060G C3D06060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 370
USD: 2.32
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Wolfspeed 600V 8A, SiC Schottky Diode, 3-Pin D2PAK C3D08060G C3D08060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 513,000
USD: 3,215.70
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Wolfspeed 1200V 38A, Dual SiC Schottky Diode, 3-Pin TO-247 C4D10120D C4D10120D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 38,700
USD: 242.59
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C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 89,000
USD: 557.89
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C2M0025120D SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 645,000
USD: 4,043.13
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C3M0065090J SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 4,570
USD: 28.65
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C2M1000170J SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 5,350
USD: 33.54
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C3M0280090D SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 34,600
USD: 216.89
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C3M0280090D SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 3,940
USD: 24.70
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C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 59,600
USD: 373.60
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C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 3,140
USD: 19.68
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Wolfspeed 650V 24A, SiC Schottky Diode, 2-Pin TO-220 C3D08065A C3D08065A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,930
USD: 12.10
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Wolfspeed 650V 32A, SiC Schottky Diode, 3-Pin DPAK C3D10065E C3D10065E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 5,950
USD: 37.30
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Wolfspeed 650V 59A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20065D C3D20065D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 37,000
USD: 231.93
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Wolfspeed 650V 59A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20065D C3D20065D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,580
USD: 9.90
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CAS300M12BM2 Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 2,394,000
USD: 15,006.58
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CAS300M12BM2 Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 241,000
USD: 1,510.69
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CAS300M17BM2 Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge Wolfspeed CAS300M17BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 3,486,000
USD: 21,851.69
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CAS300M17BM2 Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge Wolfspeed CAS300M17BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 313,000
USD: 1,962.01
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CAS120M12BM2 Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 1,421,000
USD: 8,907.42
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CAS120M12BM2 Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 145,000
USD: 908.92
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Wolfspeed 600V 20A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20060D C3D20060D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 35,300
USD: 221.28
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Wolfspeed 600V 10A, SiC Schottky Diode, 2-Pin TO-220 C3D10060A C3D10060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 29,400
USD: 184.29
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Wolfspeed 1200V 10A, SiC Schottky Diode, 2-Pin TO-220 C4D02120A C4D02120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 14,800
USD: 92.77
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C2M0040120D SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 317,000
USD: 1,987.09
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C2M0040120D SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 11,100
USD: 69.58
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Wolfspeed 1200V 41A, SiC Schottky Diode, 2-Pin TO-220 C4D15120A C4D15120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 96,600
USD: 605.53
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Wolfspeed 1200V 41A, SiC Schottky Diode, 2-Pin TO-220 C4D15120A C4D15120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 2,850
USD: 17.87
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Wolfspeed 1200V 88A, Dual SiC Schottky Diode, 3-Pin TO-247 C4D30120D C4D30120D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 3,870
USD: 24.26
[Wolfspeed]RS Components
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C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Silicon Carbide Power MOSFET, C3M Series, Cree Inc
New C3M Silicon Carbide (SiC) MOSFET Technology Drain-to-Source Breakdown Voltage (Full Operating Temperature Range): 1000 V or More New Low Impedance Package (with Driver Source) Drain-to-Source Creepage Distance/Clearance: 8 mm Fast Switching at Low Power Capacitance High Voltage Avalanche Durability with Low ON Resistance Drain-to-Source High Speed Intrinsic Diode with Ultra-Low Reverse Recovery Loss1 products found
JPY: 4,760
USD: 29.84
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D04060A C3D04060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 11,900
USD: 74.59
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Wolfspeed 1200V 4.5A, SiC Schottky Diode, 3-Pin DPAK C4D02120E C4D02120E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 2,970
USD: 18.62
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Wolfspeed 600V 4A, SiC Schottky Diode, 2-Pin TO-220 C3D02060F C3D02060F
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 10,200
USD: 63.94
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C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range New low-impedance package with driver source 8 mm of creepage/clearance between Drain and Source High-speed switching with low output capacitance High blocking voltage with low Drain-Source On-State Resistance Avalanche ruggedness Fast intrinsic diode with low Reverse Recovery
1 products found
JPY: 144,000
USD: 902.65
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Wolfspeed 600V 4A, SiC Schottky Diode, 3-Pin DPAK C3D04060E C3D04060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 17,700
USD: 110.95
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Wolfspeed 600V 3A, SiC Schottky Diode, 3-Pin DPAK C3D03060E C3D03060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 13,200
USD: 82.74
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Wolfspeed 600V 3A, SiC Schottky Diode, 3-Pin DPAK C3D03060E C3D03060E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 550
USD: 3.45
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Wolfspeed 600V 6A, SiC Schottky Diode, 2-Pin TO-220 C3D06060A C3D06060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 20,100
USD: 126.00
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Wolfspeed 600V 6A, SiC Schottky Diode, 2-Pin TO-220 C3D06060A C3D06060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 860
USD: 5.39
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Wolfspeed 600V 6A, SiC Schottky Diode, 3-Pin D2PAK C3D06060G C3D06060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 17,800
USD: 111.58
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Wolfspeed 600V 6A, SiC Schottky Diode, 3-Pin D2PAK C3D06060G C3D06060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 370
USD: 2.32
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Wolfspeed 600V 8A, SiC Schottky Diode, 3-Pin D2PAK C3D08060G C3D08060G
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 513,000
USD: 3,215.70
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Wolfspeed 1200V 38A, Dual SiC Schottky Diode, 3-Pin TO-247 C4D10120D C4D10120D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 38,700
USD: 242.59
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C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 89,000
USD: 557.89
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C2M0025120D SiC N-Channel MOSFET, 90 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0025120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 645,000
USD: 4,043.13
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C3M0065090J SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 4,570
USD: 28.65
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C2M1000170J SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 5,350
USD: 33.54
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C3M0280090D SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 34,600
USD: 216.89
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C3M0280090D SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 3,940
USD: 24.70
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C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 59,600
USD: 373.60
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C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 3,140
USD: 19.68
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Wolfspeed 650V 24A, SiC Schottky Diode, 2-Pin TO-220 C3D08065A C3D08065A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,930
USD: 12.10
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Wolfspeed 650V 32A, SiC Schottky Diode, 3-Pin DPAK C3D10065E C3D10065E
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 5,950
USD: 37.30
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Wolfspeed 650V 59A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20065D C3D20065D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 37,000
USD: 231.93
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Wolfspeed 650V 59A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20065D C3D20065D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 1,580
USD: 9.90
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CAS300M12BM2 Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 2,394,000
USD: 15,006.58
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CAS300M12BM2 Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 241,000
USD: 1,510.69
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CAS300M17BM2 Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge Wolfspeed CAS300M17BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 3,486,000
USD: 21,851.69
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CAS300M17BM2 Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge Wolfspeed CAS300M17BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 313,000
USD: 1,962.01
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CAS120M12BM2 Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 1,421,000
USD: 8,907.42
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CAS120M12BM2 Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2
Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers. ; MOSFET turn-off tail current and diode reverse recovery current are effectively zero. ; Ultra low loss high-frequency operation ; Ease of paralleling due to SiC characteristics ; Normally-off, fail-safe operation ; Copper baseplate and aluminium nitride insulator reduce thermal requirements
1 products found
JPY: 145,000
USD: 908.92
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Wolfspeed 600V 20A, Dual SiC Schottky Diode, 3-Pin TO-247 C3D20060D C3D20060D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 35,300
USD: 221.28
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Wolfspeed 600V 10A, SiC Schottky Diode, 2-Pin TO-220 C3D10060A C3D10060A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 29,400
USD: 184.29
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Wolfspeed 1200V 10A, SiC Schottky Diode, 2-Pin TO-220 C4D02120A C4D02120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 14,800
USD: 92.77
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C2M0040120D SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 317,000
USD: 1,987.09
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C2M0040120D SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D
Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
1 products found
JPY: 11,100
USD: 69.58
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Wolfspeed 1200V 41A, SiC Schottky Diode, 2-Pin TO-220 C4D15120A C4D15120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 96,600
USD: 605.53
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Wolfspeed 1200V 41A, SiC Schottky Diode, 2-Pin TO-220 C4D15120A C4D15120A
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 2,850
USD: 17.87
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Wolfspeed 1200V 88A, Dual SiC Schottky Diode, 3-Pin TO-247 C4D30120D C4D30120D
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. ; 600, 650, 1200 and 1700 Voltage ratings ; Zero reverse recovery current and forward recovery voltage ; Temperature-independent switching behaviour ; Extremely fast switching times with minimal losses ; Positive temperature coefficient forward voltage ; Devices can be paralleled without thermal runaway ; Reduction in heatsink requirements ; Optimized for PFC boost diode applications
1 products found
JPY: 3,870
USD: 24.26
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