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Contact usSearchlass="init"> 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
Wolfspeed

63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

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  • C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

FeaturesFeatures class="init"> 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
Wolfspeed

63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

  • 印刷
  • PDF
  • C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

特徴

  • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 36 A
  • Maximum Drain Source Voltage : 900 V
  • Maximum Drain Source Resistance : 78 mΩ
  • Maximum Gate Threshold Voltage : 2.1V
  • Minimum Gate Threshold Voltage : 1.8V
  • Maximum Gate Source Voltage : -8 V, +18 V
  • Package Type : TO-247
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 125 W
  • Number of Elements per Chip : 1
  • CODE No.:915-8836
  •  
Order No.Order No.ss="init"> 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
Wolfspeed

63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

  • 印刷
  • PDF
  • C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

特徴

  • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

仕様

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 36 A
  • Maximum Drain Source Voltage : 900 V
  • Maximum Drain Source Resistance : 78 mΩ
  • Maximum Gate Threshold Voltage : 2.1V
  • Minimum Gate Threshold Voltage : 1.8V
  • Maximum Gate Source Voltage : -8 V, +18 V
  • Package Type : TO-247
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 125 W
  • Number of Elements per Chip : 1
  • CODE No.:915-8836
  •  
アズワン品番 63-5177-56
Model No. C3M0065090D
標準価格 JPY: 4,470 USD: 27.81
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier StockSupplier Stock"init"> 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
Wolfspeed

63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

  • 印刷
  • PDF
  • C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

特徴

  • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

仕様

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 36 A
  • Maximum Drain Source Voltage : 900 V
  • Maximum Drain Source Resistance : 78 mΩ
  • Maximum Gate Threshold Voltage : 2.1V
  • Minimum Gate Threshold Voltage : 1.8V
  • Maximum Gate Source Voltage : -8 V, +18 V
  • Package Type : TO-247
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 125 W
  • Number of Elements per Chip : 1
  • CODE No.:915-8836
  •  
アズワン品番 63-5177-56
型番 C3M0065090D
標準価格 JPY: 4,470 USD: 27.81
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数 1piece
在庫数
Supplier Stock

This page is the page of C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

Explore AXEL

  • Categories
  • CatalogsCatalogsinit"> 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
    Wolfspeed

    63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

    • 印刷
    • PDF
    • C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

    特徴

    • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

    仕様

    • Quantity:1piece
    • Channel Type : N
    • Maximum Continuous Drain Current : 36 A
    • Maximum Drain Source Voltage : 900 V
    • Maximum Drain Source Resistance : 78 mΩ
    • Maximum Gate Threshold Voltage : 2.1V
    • Minimum Gate Threshold Voltage : 1.8V
    • Maximum Gate Source Voltage : -8 V, +18 V
    • Package Type : TO-247
    • Mounting Type : Through Hole
    • Transistor Configuration : Single
    • Channel Mode : Enhancement
    • Category : Power MOSFET
    • Maximum Power Dissipation : 125 W
    • Number of Elements per Chip : 1
    • CODE No.:915-8836
    •  
    アズワン品番 63-5177-56
    型番 C3M0065090D
    標準価格 JPY: 4,470 USD: 27.81
    Excange rate 1USD= 160.72JPY
    Valid price in Japan
    入り数 1piece
    在庫数
    サプライヤ在庫

    [$1]C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed[/$1]

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    How to useASONEs="init"> 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    Listed products : 3 milion products
    How to use
    Cách sử dụng
    Contact us
    All Categories
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • Categories
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
    Wolfspeed

    63-5177-56 C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

    • Print
    • PDF
    • C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D

    Features

    • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

    Spec

    • Quantity:1piece
    • Channel Type : N
    • Maximum Continuous Drain Current : 36 A
    • Maximum Drain Source Voltage : 900 V
    • Maximum Drain Source Resistance : 78 mΩ
    • Maximum Gate Threshold Voltage : 2.1V
    • Minimum Gate Threshold Voltage : 1.8V
    • Maximum Gate Source Voltage : -8 V, +18 V
    • Package Type : TO-247
    • Mounting Type : Through Hole
    • Transistor Configuration : Single
    • Channel Mode : Enhancement
    • Category : Power MOSFET
    • Maximum Power Dissipation : 125 W
    • Number of Elements per Chip : 1
    • CODE No.:915-8836
    •  
    Order No. 63-5177-56
    Model No. C3M0065090D
    Standard price JPY: 4,470 USD: 27.81
    Excange rate 1USD= 160.72JPY
    Valid price in Japan
    Quantity 1piece
    Stock in Japan
    Supplier Stock

    This page is the page of C3M0065090D SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

    Explore AXEL

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    • Catalogs
    • Brands

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