63-6981-91 C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Features
- Silicon Carbide Power MOSFET, C3M Series, Cree Inc
- New C3M Silicon Carbide (SiC) MOSFET Technology Drain-to-Source Breakdown Voltage (Full Operating Temperature Range): 1000 V or More New Low Impedance Package (with Driver Source) Drain-to-Source Creepage Distance/Clearance: 8 mm Fast Switching at Low Power Capacitance High Voltage Avalanche Durability with Low ON Resistance Drain-to-Source High Speed Intrinsic Diode with Ultra-Low Reverse Recovery Loss
Spec
- Quantity:1piece
- Channel Type : N
- Maximum Continuous Drain Current : 35 A
- Maximum Drain Source Voltage : 1000 V
- Maximum Drain Source Resistance : 90 mΩ
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 1.8V
- Maximum Gate Source Voltage : -8 V, +19 V
- Package Type : TO-247
- Mounting Type : Through Hole
- Pin Count : 4
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 113.5 W
- Minimum Operating Temperature : -55 °C
- CODE No.:125-3453
| Order No. | 63-6981-91 | |
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| Model No. | C3M0065100K | |
| Standard price |
JPY: 4,760
USD: 29.62
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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