64-1822-26 C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
Features
- Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:19 A
- Maximum Drain Source Voltage:1200 V
- Maximum Drain Source Resistance:196 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-5 V, +20 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Forward Transconductance:4.8S
- CODE No.:162-9709
| Order No. | 64-1822-26 | |
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| Model No. | C2M0160120D | |
| Standard price |
JPY: 89,000
USD: 557.89
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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