Features

Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

Spec

Quantity:1set(30pieces)

Channel Type:N

Maximum Continuous Drain Current:23 A

Maximum Drain Source Voltage:900 V

Maximum Drain Source Resistance:155 mΩ

Maximum Gate Threshold Voltage:3.5V

Minimum Gate Threshold Voltage:1.8V

Maximum Gate Source Voltage:-8 V, +18 V

Package Type:TO-247

Mounting Type:Through Hole

Pin Count:3

Channel Mode:Enhancement

Category:Power MOSFET

Maximum Power Dissipation:97 W

Transistor Material:SiC

CODE No.:145-7049

Order No.

64-1891-80

Model No.

C3M0120090D

Standard price

JPY: 55,700 USD: 349.39

Excange rate 1USD= 159.42JPY
Valid price in Japan

Quantity

1set(30pieces)

Stock in Japan

サプライヤ在庫

Wolfspeed

64-1891-80　C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed　C3M0120090D

印刷

特徴

Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

仕様

Quantity:1set(30pieces)
Channel Type:N
Maximum Continuous Drain Current:23 A
Maximum Drain Source Voltage:900 V
Maximum Drain Source Resistance:155 mΩ
Maximum Gate Threshold Voltage:3.5V
Minimum Gate Threshold Voltage:1.8V
Maximum Gate Source Voltage:-8 V, +18 V
Package Type:TO-247
Mounting Type:Through Hole
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:97 W
Transistor Material:SiC
CODE No.:145-7049

アズワン品番	64-1891-80
型番	C3M0120090D
標準価格	JPY: 55,700 USD: 349.39 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1set(30pieces)
在庫数
サプライヤ在庫