63-8393-98 C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Features
- Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range New low-impedance package with driver source 8 mm of creepage/clearance between Drain and Source High-speed switching with low output capacitance High blocking voltage with low Drain-Source On-State Resistance Avalanche ruggedness Fast intrinsic diode with low Reverse Recovery
Spec
- Quantity:1set(30pieces)
- Channel Type:N
- Maximum Continuous Drain Current:35 A
- Maximum Drain Source Voltage:1000 V
- Maximum Drain Source Resistance:90 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:1.8V
- Maximum Gate Source Voltage:-8 V, +19 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:113.5 W
- Number of Elements per Chip:1
- CODE No.:168-4886
| Order No. | 63-8393-98 | |
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| Model No. | C3M0065100K | |
| Standard price |
JPY: 133,000
USD: 834.27
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1set(30pieces) | |
| Stock in Japan |
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| Supplier Stock |
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