64-2004-21 ［Discontinued］FQT4N20LTF N-Channel MOSFET, 850 mA, 200 V QFET, 3 + Tab-Pin SOT-223 ON Semiconductor FQT4N20LTF
Đặc trưng
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Thông số kỹ thuật
- Quantity:1set(4000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:850 mA
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:1.35 Ω
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SOT-223
- Mounting Type:Surface Mount
- Pin Count:3 + Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.2 W
- Typical Turn-Off Delay Time:15 ns
- CODE No.:166-1837
| Mã đặt hàng | 64-2004-21 | |
|---|---|---|
| Mã Model | FQT4N20LTF | |
| Giá chuẩn |
JPY: 276,000
USD: 1,717.27
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Số lượng | 1set(4000pieces) | |
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| Hàng có sẵn ở Nhật Bản | - | |