사양

• grade: production grade
• Type: 4H
• Surface orientation error:<11-20>4±0.15°
• Dopant: n-type
• Resistivity: 0.015~0.025 Ω
• Diameter: 150.0 +/- 0.2 mm
• Thickness: 350±25 μm
• Primary orifla: [1-100] +/- 5 degrees
• Length of primary orifice: 47.5±1.5 mm
• Secondary orientation: None
• TTV:≤3μm
• Bow:-25~25μm
• Warp:≤35μm
• Surface Finish: Si-faceCMP Si-faceCMP
• Back Finish:C-face polished
• Surface roughness (Si-face): Ra≤0.2 nm (5 μm×5 μm)
• Micropipe: ≤0.2ea/cm2
• BPD:≤1500ea/cm2
• TSD:≤300ea/cm2
• Quantity: 1 box (5 sheets) * 1 case per sheet
• *custom-made product
• The azimuth (cutting angle), OF azimuth angle tolerance, and thickness tolerance can be reduced and processed with high precision, enabling accurate groove formation in etching.
• Various shape processing and surface treatment are possible (Examples: Counterbore, Drilling, Oxidized Wafer).
• Suitable for desired resistivity and wafer thickness.
• *Although this product is manufactured and processed using crystalline materials for semiconductors, it is not possible to certify the purity of the materials.
• *Please coordinate with the supplier in case of special order.
•