사양

• grades: Production Grade
• Type: 4H
• Surface orientation error:<11-20>4±0.15°
• dopant: n-type
• Resistivity: 0.015~0.025 Ω
• Diameter: 150.0 +/- 0.2 mm
• Thickness: 350±25 μm
• Primary orifra: [1-100] +/- 5 degrees
• Length of primary orifra: 47.5±1.5 mm
• Secondary Orifra: None
• TTV:≤3μm
• Bow:-25~25μm
• Warp:≤35μm
• Surface Finish: Si-faceCMP
• Back Finish:C-face polished
• Surface roughness (Si-face): Ra≤0.2 nm (5 μm x 5 μm)
• Micropipe: ≤0.2ea/cm2
• BPD:≤1500ea/cm2
• TSD:≤300ea/cm2
• Quantity: 1 box (3 sheets) * 1 case per sheet
• *custom-made product
• The azimuth (cutting angle), OF azimuth angle tolerance, and thickness tolerance can be reduced and processed with high precision, enabling accurate groove formation during etching.
• Various shapes and surface treatments are possible (Examples: gouging, drilling, wafer with oxide film).
• It is possible to match the specific resistivity and wafer thickness you desire.
• *Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.
• *In the case of a special order order, please coordinate with the supplier.
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