63-8219-21 [已停用]MOSFET N通道100V6.9ASO8 IRF7473PBF
功能
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead.
- In addition, it includes a form factor for almost any board layout or thermal design challenge.
- Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
规格
- 数量:1套 (95个)
- N通道功率MOSFET100V,英飞凌。英飞凌系列离散HEXFET®功率MOSFET包括表面贴装和引线封装中的N沟道器件。并形成因素,可以解决几乎任何板布局和热设计挑战。通过电阻范围基准,降低传导损耗,使设计人员能够提供最佳的系统效率。
- 代码号:178-1529
| 第号命令。 | 63-8219-21 | |
|---|---|---|
| 型号号。 | IRF7473PBF | |
| 标准价格 |
JPY: 14,200
USD: 88.35
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| 数量 | 1set(95pieces) | |
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| 日本股票 | - | |
![[已停用]MOSFET N通道100V6.9ASO8 IRF7473PBF](https://aimg.as-1.co.jp/c/63/8219/21/63812764.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)