63-7020-21 IRF7907TRPBF双N通道MOSFET, 9.1 A, 11 A, 30 V HEXFET,8PinSOIC英飞凌 IRF7907TRPBF
功能
- Dual N-Channel Power MOSFETs Infineon
- Infineon dual power MOSFETs integrate two HEXFETR devices to provide a space-saving and cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options allow designers to choose a dual N-channel configuration.
规格
- 数量:1袋 (10个)
- 信道类型:N
- 最大持续降水:9.1 A, 11 A
- 最大漏源电压:30 V
- 最大泄漏源电阻:13.7 mΩ，20.5 mΩ
- 最大门限电压:2.35V
- 最小门限电压:1.35V
- 最大栅源电压:-20 V,+20 V
- 封装类型:SOIC
- 安装类型:表面安装
- 销数:8
- 通道模式:增强
- Category:功率MOSFET
- 最大功耗:2W
- 系列:HEXFET
- 代码号:130-0964
| 第号命令。 | 63-7020-21 | |
|---|---|---|
| 型号号。 | IRF7907TRPBF | |
| 标准价格 |
JPY: 1,850
USD: 11.51
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| 数量 | 1bag(10pieces) | |
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