사양

• grades: production grades
• Type: 4H
• Surface orientation error:<11-20>4±0.5 °
• Dopant: N-type Nitrogen
• Resistivity: 0.015~0.025 ohm · cm
• Diameter: 200.0 +/- 0.2 mm
• Thickness: 500±25 μm
• Principal notch orientation: [1-100] +/- 5 degrees
• Main notch depth: 1-1.5 mm
• Second Orifra: None
• LTV:≤5(10mm×10mm)μm
• TTV:≤10μm
• Bow:0±25μm
• Warp:≤30μm
• (AFM)Front(Si-face)Roughness:Ra≤0.2 nm
• Micropipe: ≤2ea/cm
• Metal impurities: ≤1E11atoms/cm
• TED:≤7000ea/cm
• BPD:≤2000ea/cm
• TSD:≤500ea/cm
• < Surface condition >
• Front Side: Si
• face states: Si-face CMP
• Particles ≤100 (size≥0.3 μm) ea/wafer
• Scratch: ≤5, Total Length≤200mmea/wafer
• < Back surface condition >
• Face State: C-face polished
• Scratch: NA ea/mm
• Back surface roughness: Ra≤5 nm
• laser marks: On
• edges: Chamfer
• Notes: "NA" = None. Items not metioned may refer to SEMI-STD
• Quantity: 1 (1 box)
• *custom-made product
• The azimuth (cutting angle), OF azimuth angle tolerance, and thickness tolerance can be reduced and processed with high precision, enabling accurate groove formation during etching.
• Various shapes and surface treatments are possible (Examples: gouging, drilling, wafer with oxide film).
• It is possible to match the specific resistivity and wafer thickness you desire.
• *Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.
• *In the case of a special order order, please coordinate with the supplier.
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