사양

• Size: 12 inch silicon wafer
• Diameter (mm): 300.0±0.2
• Wafer thickness (μm): 775±25
• Manufacturing method: CZ method
• Conductive Type: N Type
• Face Bearing: 100
• Notch orientation: 110
• Resistance value (Ω · cm): 1~100
• V Notch
• Face States: Mirror/Mirror
• particles: > 0.2 μm, < 50 particles
• TTV(μm):≦10
• Quantity: 25 sheets (1 box)
• *Custom-made products:
• The azimuth (cutting angle), OF azimuth angle tolerance, and thickness tolerance can be reduced and processed with high precision, enabling accurate groove formation during etching.
• Various shapes and surface treatments are possible (Examples: gouging, drilling, wafer with oxide film).
• It is possible to match the specific resistivity and wafer thickness you desire.
• *Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.
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