67-3018-22　4 inch SIC Wafer (Dummy/4H-N) for Research 10 Pieces　

Features

We have a proven track record for research and development, and offer wafers made from high-purity materials from small quantities.

Grade: Dummy
Type: 4H
Surface orientation error:<11-20>4±0.15°
dopant: n-type
Resistivity: 0.015~0.025 Ω
Diameter: 99.5~100 mm
Thickness: 350±25 μm
Primary orifra: [1-100] +/- 5 degrees
Length of primary orifra: 32.5±1.5 mm
Secondary orifra: 18±1.5 mm
TTV:20μm
Bow:45~45μm
Warp:50μm
Surface Finish: Si-faceCMP
Surface roughness (Si-face): Ra≤0.2 nm (5 μm x 5 μm)
Micropipe: ≤10ea/cm2
Black laser marking: 1 mm (from top edge)
Quantity: 1 box (10 sheets) * 1 case per 1 sheet
*custom-made product
The azimuth (cutting angle), OF azimuth angle tolerance, and thickness tolerance can be reduced and processed with high precision, enabling accurate groove formation during etching.
Various shapes and surface treatments are possible (Examples: gouging, drilling, wafer with oxide film).
It is possible to match the specific resistivity and wafer thickness you desire.
*Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.
*In the case of a special order order, please coordinate with the supplier.

Package size：200×210×190 mm　1 kg　 [About Package size]

Order No.	67-3018-22
Standard price	JPY: 521,900 USD: 3,247.26 Excange rate 1USD= 160.72JPY Valid price in Japan
Quantity	1box(10sheets)
Stock in Japan
Supplier Stock

Product image	Order No.	Name	Model No.		Quantity	Standard price	Valid price in Japan	Stock [Supplier Stock]
	67-3018-22	4 inch SIC Wafer (Dummy/4H-N) for Research 10 Pieces			1box(10sheets)	JPY: 521,900	USD: 3,247.26
	67-3018-26	4-inch SIC Wafer (Production/4H-N) 5 Sheets for Research			1box(5sheets)	JPY: 559,700	USD: 3,482.45

Catalog Name	Page
AS ONE Catalog 2025 [Instruments for Laboratory]	1939