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Wolfspeed

64-1935-20　C2M0040120D SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed　C2M0040120D

Features

  • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:60 A
  • Maximum Drain Source Voltage:1200 V
  • Maximum Drain Source Resistance:52 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-5 V, +20 V
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:330 W
  • Typical Turn-On Delay Time:15 ns
  • CODE No.:923-0711
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Order No. 64-1935-20
Model No. C2M0040120D
Standard price JPY: 11,100 USD: 69.58
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock

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