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Wolfspeed

64-1891-81　C3M0120090D SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed　C3M0120090D

Features

  • Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:23 A
  • Maximum Drain Source Voltage:900 V
  • Maximum Drain Source Resistance:155 mΩ
  • Maximum Gate Threshold Voltage:3.5V
  • Minimum Gate Threshold Voltage:1.8V
  • Maximum Gate Source Voltage:-8 V, +18 V
  • Package Type:TO-247
  • Mounting Type:Through Hole
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:97 W
  • Number of Elements per Chip:1
  • CODE No.:915-8849
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Order No. 64-1891-81
Model No. C3M0120090D
Standard price JPY: 3,140 USD: 19.68
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock

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