64-1891-74 C3M0065090J SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
Features
- Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:35 A
- Maximum Drain Source Voltage:900 V
- Maximum Drain Source Resistance:78 mΩ
- Maximum Gate Threshold Voltage:2.1V
- Minimum Gate Threshold Voltage:1.8V
- Maximum Gate Source Voltage:+25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:113 W
- Typical Turn-Off Delay Time:15 ns
- CODE No.:915-8830
| Order No. | 64-1891-74 | |
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| Model No. | C3M0065090J | |
| Standard price |
JPY: 4,570
USD: 28.44
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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