64-1822-25 [Discontinued]C2M1000170D SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M1000170D
Features
- Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:5 A
- Maximum Drain Source Voltage:1700 V
- Maximum Drain Source Resistance:1.4 Ω
- Maximum Gate Threshold Voltage:3.1V
- Minimum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-5 V, +20 V
- Package Type:TO-247
- Mounting Type:Through Hole
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:69 W
- Height:21.1mm
- CODE No.:904-7345
| Order No. | 64-1822-25 | |
|---|---|---|
| Model No. | C2M1000170D | |
| Standard price |
JPY: 2,620
USD: 16.42
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |
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