63-5177-55 ［Discontinued］C2M0280120D SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D
Features
- Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. ; Enhancement-mode N-channel SiC technology ; High Drain-Source breakdown voltages - up to 1200V ; Multiple devices are easy to parallel and simple to drive ; High speed switching with low on-resistance ; Latch-up resistant operation
Spec
- Quantity：1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 10 A
- Maximum Drain Source Voltage : 1200 V
- Maximum Drain Source Resistance : 370 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : +25 V
- Package Type : TO-247
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 62.5 W
- Number of Elements per Chip : 1
- CODE No.:915-8820
| Order No. | 63-5177-55 | |
|---|---|---|
| Model No. | C2M0280120D | |
| Standard price |
JPY: 1,810
USD: 11.26
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(2pieces) | |
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| Stock in Japan | - | |