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4-1360-03 Freestanding substrate chip type semi- insulation of GaN substrate GaN-FS-C-SI-S10*10

Spec

  • Type: Semi- insulation (Fe-doped)
  • Specific resistance: > 10 ^ 6 Ω · cm
  • Quantity : 1 box (Iru 2 pieces)
  • Chip Size: 10 x 10.5 mm
  • thickness: 350 ± 25 μm
  • Effective area: 90% or more
  • Orientation: C-plane (0001) off angle toward M-AXIS 0.35 ° ± 0.15 °
  • Surface: Epi-ready polished finish
  • Back: Fine ground finish
  • Quantity : 1 box (Iru 2 pieces)
  •  

Package size:225×170×80 mm 1 kg  [About Package size]

Order No. 4-1360-03
Model No. GaN-FS-C-SI-S10*10
Standard price JPY: 187,000 USD: 1,172.19
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1box(2sheets)
Stock in Japan
Supplier Stock

Product Variations (Different Sizes, Specifications, Optional Products, etc.)

Product image Order No. Name Model No. Quantity Standard price Valid price in Japan Stock
[Supplier Stock]
4-1360-03 Freestanding substrate chip type semi- insulation of GaN substrate GaN-FS-C-SI-S10*10 GaN-FS-C-SI-S10*10 1box(2sheets) JPY: 187,000 USD: 1,172.19

4-1360-01 [Discontinued]Freestanding GaN Substrate Chip Type N (Un-doped) GaN-FS-C-U-S10*10 GaN-FS-C-U-S10*10 1box(2sheets) JPY: 120,000 USD: 752.21

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4-1360-02 [Out of stock]Freestanding GaN Substrate Chip Type N (Ge-doped) GaN-FS-C-N-S10*10 GaN-FS-C-N-S10*10 1box(2sheets) JPY: 134,000 USD: 839.97

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Product Catalog

Catalog Name Page
AS ONE Catalog 2021 [Instruments for Laboratory] 2250