63-5137-13 ［Discontinued］N-Channel Power MOSFET 600 V 12 A 3 Pin Package TO-220FM 1 Bag (2 Pieces) R6012ANX
功能
- N-Channel MOSFET transistor, ROHM
规格
- Quantity: 1 bag (2 pcs)
- Channel type: N
- Maximum continuous drain current: 12 A
- Maximum drain-source voltage: 600 V
- Maximum drain-source resistance: 420 mΩ
- Maximum gate threshold voltage: 4.5 V
- Maximum gate-source voltage: -30 V, +30 V
- Package Type: TO-220FM
- Implementation Type: Through Hole
- Pin Count: 3
- Channel Mode: Enhancement
- Category: Power MOSFET
- Maximum power consumption: 50 W
- Number of elements per chip: 1
- RoHS Compliance: Compliance
- Securities Code: 826-7539
| 第号命令。 | 63-5137-13 | |
|---|---|---|
| 型号号。 | R6012ANX | |
| 标准价格 |
JPY: 510
USD: 3.20
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| 数量 | 1bag(2pieces) | |
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| 日本股票 | - | |