[Infineon]อาร์เอส คอมโพเนนต์
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เรียงลําดับตาม:
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IPB60R160P6ATMA1 N-Channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3 พิน D2PAK Infineon IPB60R160P6ATMA1
Infineon CoolMOS 6/P6 Series Power MOSFET
Infineon's CoolMOSE6 and P6 series MOSFETs. These devices are highly efficient and can be used in a variety of applications, including power factor correction (PFC), lighting, consumer devices, as well as solar power, communications, and servers.1พบ ผลิตภัณฑ์
JPY: 1,380
USD: 8.59
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IPD50R380CEAUMA1 N-Channel MOSFET, 14.1 A, 550 V CoolMOS CE, 3 พิน DPAK Infineon IPD50R380CEAUMA1
Infineon CoolMOS CE Power MOSFET
1พบ ผลิตภัณฑ์
JPY: 1,960
USD: 12.20
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IPD60R1K0CEAUMA1 N-Channel MOSFET, 6.8 A, 650 V CoolMOS CE, DPAK แบบ 3 พิน IPD60R1K0CEAUMA1
Infineon CoolMOS CE Power MOSFET
1พบ ผลิตภัณฑ์
JPY: 3,100
USD: 19.29
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IPD80R1K4P7ATMA1 N-Channel MOSFET, 4 A, 800 V CoolMOS P7, DPAK Infineon 3 พิน IPD80R1K4P7ATMA1
Infineon CoolMOSP7 Power MOSFET
The 800 V CoolMOSP7 power MOSFET family has established even higher efficiency and thermal characteristics. Suitable for applications such as power adapters, LED lighting, audio, industrial and auxiliary power supplies.1พบ ผลิตภัณฑ์
JPY: 520
USD: 3.24
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IPN50R1K4CEATMA1 N-Channel MOSFET, 4.8 A, 550 V CoolMOS CE, 3 + แท็บ-Pin SOT-223 Infineon IPN50R1K4CEATMA1
Infineon CoolMOS CE Power MOSFET
1พบ ผลิตภัณฑ์
JPY: 1,250
USD: 7.78
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IPN50R950CEATMA1 N-Channel MOSFET, 6.6 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223 Infineon IPN50R950CEATMA1
Infineon CoolMOS CE Power MOSFET
1พบ ผลิตภัณฑ์
JPY: 2,780
USD: 17.30
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IPP055N03LGXSA1 N-Channel MOSFET, 50 A, 30 V OptiMOS3, 3+Tab-Pin to-220 Infineon IPP055N03LGXKSA1
Infineon OptiMOS3 Power MOSFET, up to 40 V
OptiMOS products are packaged in a high-performance package for even the most challenging applications. This allows for maximum flexibility in limited space. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the next generation of stringent voltage regulation standards for computing applications.1พบ ผลิตภัณฑ์
JPY: 1,220
USD: 7.59
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IPP60R099P6XKSA1 N-Channel MOSFET, 37.9 A, CoolMOS P650 V, 3 + แท็บ-พิน ทู-220 Infinion IPP60R099P6XKSA1
Infineon CoolMOS 6/P6 Series Power MOSFET
Infineon's CoolMOSE6 and P6 series MOSFETs. These devices are highly efficient and can be used in a variety of applications, including power factor correction (PFC), lighting, consumer devices, as well as solar power, communications, and servers.1พบ ผลิตภัณฑ์
JPY: 1,100
USD: 6.84
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IRF135S203 N-Channel MOSFET, 129 A, 135 V HEXFET, 3-Pin D2PAK Infineon IRF135S203
StrongIRFET Power MOSFET, Infineon
The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.1พบ ผลิตภัณฑ์
JPY: 1,810
USD: 11.26
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IRF6648TRPBF N-Channel MOSFET, 86 A, 60 V DirectFET, HEXFET, 3+Tab-Pin Infineon IRF6648TRPBF
DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm1พบ ผลิตภัณฑ์
JPY: 620
USD: 3.86
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IRF7907TRPBF Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7907TRPBF
Dual N-Channel Power MOSFETs Infineon
Infineon dual power MOSFETs integrate two HEXFETR devices to provide a space-saving and cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options allow designers to choose a dual N-channel configuration.1พบ ผลิตภัณฑ์
JPY: 1,850
USD: 11.51
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IRF7946TRPBF N-Channel MOSFET, 198 A, 40 V DirectFET, 3 + Tab-Pin MX Infineon IRF7946TRPBF
StrongIRFET Power MOSFET, Infineon
The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.1พบ ผลิตภัณฑ์
JPY: 1,040
USD: 6.47
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IRF8010STRLPBF N-Channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRF8010STRLPBF
N-Channel Power MOSFET 100 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 2,220
USD: 13.81
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IRF878TRPBF N-Channel MOSFET, 24 A, 30 V HEXFET, 8-Pin SOIC Infinion IRF8788TRPBF
N-Channel Power MOSFET 30 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,230
USD: 7.65
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IRF9335TRPBF P-Channel MOSFET, 5.4 A, ฮีทซิงค์ 30 V, 8-Pin SOIC Infinion IRF9335TRPBF
P Channel Power MOSFET 30 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include a P channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,430
USD: 8.90
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IRF9362TRPBF Dual P-Channel MOSFET, 8 A, 30 V HEXFET, 8-Pin SOIC Infinion IRF9362TRPBF
Dual P Channel Power MOSFET, Infineon
The Infineon dual power MOSFET integrates two HEXFETR devices to provide a space-saving, cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options are available, allowing designers to choose a dual P-channel configuration.1พบ ผลิตภัณฑ์
JPY: 3,980
USD: 24.76
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IRFH5006TRPBF N-Channel MOSFET, 100 A, 60 V HEXFET, 8-Pin PQFN Infineon IRFH5006TRPBF
N-Channel Power MOSFET 60 → 80 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 2,210
USD: 13.75
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IRFH5015TRPBF N-Channel MOSFET, 44 A, 150 V HEXFET, 8-Pin PQFN Infineon IRFH5015TRPBF
N-Channel Power MOSFET 150 → 600 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,080
USD: 6.72
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IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon IRFH5210TRPBF
N-Channel Power MOSFET 100 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,730
USD: 10.76
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IRFR740TRPBF N-Channel MOSFET, 180 A, HEXFET 40 V, DPAK Infineon 3 พิน IRFR7440TRPBF
N-Channel Power MOSFET 40 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,650
USD: 10.27
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IRFR7546TRPBF N-Channel MOSFET, 71 A, 60 V HEXFET, 3-Pin DPAK Infineon IRFR7546TRPBF
StrongIRFET Power MOSFET, Infineon
The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.1พบ ผลิตภัณฑ์
JPY: 1,770
USD: 11.01
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IRFS3004TRL7PPN-Channel MOSFET, 400 A, 40 V HEXFET, 7 + Tab-Pin D2PAK Infineon IRFS3004TRL7PP
N-Channel Power MOSFET 40 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,620
USD: 10.08
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IRFS3006TRL7PPN-Channel MOSFET, 293 A, 60 V HEXFET, 7 + Tab-Pin D2PAK Infineon IRFS3006TRL7PP
N-Channel Power MOSFET 60 → 80 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,400
USD: 8.71
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IRFS3307ZTRLPBF N-Channel MOSFET, 128 A, 75 V HEXFET, 3-Pin D2PAK Infineon IRFS3307ZTRLPBF
N-Channel Power MOSFET 60 → 80 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 3,750
USD: 23.33
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IRFS4010TRL7PPN-Channel MOSFET, 190 A, 100 V HEXFET, 7 + Tab-Pin D2PAK Infineon IRFS4010TRL7PP
N-Channel Power MOSFET 100 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 2,090
USD: 13.00
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IRFS4010TRLPBF N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRFS4010TRLPBF
N-Channel Power MOSFET 100 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,460
USD: 9.08
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IRFS4510TRLPBF N-Channel MOSFET, 61 A, 100 V HEXFET, 3-Pin D2PAK Infineon IRFS4510TRLPBF
N-Channel Power MOSFET 100 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 2,880
USD: 17.92
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IRFS7730TRLPBF N-Channel MOSFET, 246 A, 75 V HEXFET, 3-Pin D2PAK Infineon IRFS7730TRLPBF
StrongIRFET Power MOSFET, Infineon
The StrongIRFET family made by Infineon is optimized for low R DS (on) and high current passability. This portfolio provides excellent gate characteristics, avalanche characteristics, and dynamic dv/dt durability for low-frequency applications including motor drives, power tools, inverters, and battery management that require performance and robustness.1พบ ผลิตภัณฑ์
JPY: 1,520
USD: 9.46
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IRLB8314PBF N-Channel MOSFET, 171 A, ฮีทซิงค์ 30 V, 3-Pin to-220AB Infineon IRLB8314PBF
N-Channel Power MOSFET 30 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,380
USD: 8.59
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IRLHS2242TRPBF P-Channel MOSFET, 7.2 A, 20 V HEXFET, 6-Pin PQFN Infineon IRLHS2242TRPBF
N-Channel Power MOSFET 12 → 25 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,230
USD: 7.65
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IRLS3034TRL7PPN-Channel MOSFET, 380 A, 40 V HEXFET, 7 + Tab-Pin D2PAK Infineon IRLS3034TRL7PP
N-Channel Power MOSFET 40 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,790
USD: 11.14
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IRLS3034TRLPBF N-Channel MOSFET, 343 A, HEXFET 40 V, 3-Pin D2PAK Infineon IRLS3034TRLPBF
N-Channel Power MOSFET 40 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,290
USD: 8.03
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IRLS3036TRL7PPN-Channel MOSFET, 300 A, 60 V HEXFET, 7 + Tab-Pin D2PAK Infineon IRLS3036TRL7PP
N-Channel Power MOSFET 60 → 80 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,170
USD: 7.28
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IRLS3036TRLPBF N-Channel MOSFET, 270 A, 60 V HEXFET, 3-Pin D2PAK Infineon IRLS3036TRLPBF
N-Channel Power MOSFET 60 → 80 V, Infineon
Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.1พบ ผลิตภัณฑ์
JPY: 1,720
USD: 10.70
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Infineon 1EDI20I12AFXUMA1 Dual Galvanic Isolated MOSFET Power Driver, -3.5 A, 4 A 8 พิน, DSO 1EDI20I12AFXUMA1
EiceDRIVER Insulated MOSFET/IGBT Gate Driver • Insulation voltage between input and output: Wide input operating range Individual source/sink output • Application: AC motor/Brushless DC motor drive
1พบ ผลิตภัณฑ์
JPY: 490,000
USD: 3,048.78
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Infineon 1EDI20N12AFXUMA1 Dual Galvanic Isolated MOSFET Power Driver, -3.5 A, 4 A 8 พิน, DSO 1EDI20N12AFXUMA1
EiceDRIVER Insulated MOSFET/IGBT Gate Driver • Insulation voltage between input and output: Wide input operating range Individual source/sink output • Application: AC motor/Brushless DC motor drive
1พบ ผลิตภัณฑ์
JPY: 490,000
USD: 3,048.78
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Infineon 1EDI30I12MFXUMA1 Dual Galvanic Isolated MOSFET Power Driver, -6.2 A, 5.9 A 8-Pin, DSO 1EDI30I12MFXUMA1
EiceDRIVER Insulated MOSFET/IGBT Gate Driver • Insulation voltage between input and output: Wide input operating range Individual source/sink output • Application: AC motor/Brushless DC motor drive
1พบ ผลิตภัณฑ์
JPY: 579,000
USD: 3,602.54
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Infineon 1EDI60N12AFXUMA1 Dual Galvanic Isolated MOSFET Power Driver, -9.4 A, 10 A 8-Pin, DSO 1EDI60N12AFXUMA1
EiceDRIVER Insulated MOSFET/IGBT Gate Driver • Insulation voltage between input and output: Wide input operating range Individual source/sink output • Application: AC motor/Brushless DC motor drive
1พบ ผลิตภัณฑ์
JPY: 596,000
USD: 3,708.31
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BSC009NE2LS5ATMA1 N-Channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infinion BSC009NE2LS5ATMA1
Infineon OptiMOS5 Power MOSFET
1พบ ผลิตภัณฑ์
JPY: 846,000
USD: 5,263.81
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BSC020N03LSGATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS 3, 8 พิน TDSON Infineon BSC020N03LSGATMA1
Infineon OptiMOS3 Power MOSFET, up to 40 V
OptiMOS products are packaged in a high-performance package for even the most challenging applications. This allows for maximum flexibility in limited space. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the next generation of stringent voltage regulation standards for computing applications.1พบ ผลิตภัณฑ์
JPY: 616,000
USD: 3,832.75
