사양

• Size: 8-inch silicon wafer
• TEOS (Silicon Nitride) [PE-CVD] Film Thickness: Aim for 900 nm (with Data)
• Diameter (mm): 200.0±0.2
• Wafer thickness (μm): 725±25
• Manufacturing method: CZ method
• Conductive Type: P Type
• Face Bearing: 100
• Resistance value (Ω · cm): 1~100
• V Notch
• Face State: Mirror/Etched
• particles: dust free
• TTV(μm):≦20
• Quantity: 25 sheets (1 box)
• *custom-made product
• We also have a variety of other products, such as laminated films and patterning, so please feel free to contact us.
• Various shapes and surface treatments are possible (Examples: Etching, Counterboring, Drilling, Oxidized Wafers).
• It is possible to match the specific resistivity and wafer thickness you desire.
• *Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.
• *We do not ask any questions about the products with film unevenness or film thickness.
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