사양

• Quantity: 1 bag (2 pcs)
• Channel type: N
• Maximum continuous drain current: 24 A
• Maximum drain-source voltage: 650 V
• Maximum drain-source resistance: 185 mΩ
• Maximum gate threshold voltage: 5 V
• Minimum gate threshold voltage: 3 V
• Maximum gate-source voltage: ±30 V
• Package Type: TO-220AB
• Implementation Type: Through Hole
• Transistor Configuration: Single
• Channel Mode: Enhancement
• Category: Power MOSFET
• Maximum power consumption: 253 W
• Operating temperature Min: -55 °C
• RoHS compliance: N/A
• Securities Code: 177-6429
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