사양

• Quantity: 1 bag (360 pcs)
• Channel type: N
• Maximum continuous drain current: 35 A
• Maximum drain-source voltage: 650 V
• Maximum drain-source resistance: 110 mΩ
• Maximum gate threshold voltage: 4 V
• Minimum gate threshold voltage: 2 V
• Maximum gate-source voltage: ±30 V
• Package Type: TO-3PF
• Implementation Type: Through Hole
• Transistor Configuration: Single
• Channel Mode: Enhancement
• Category: Power MOSFET
• Maximum power consumption: 102 W
• Typical turn-on delay time: 35 ns
• RoHS compliance: N/A
• Securities Code: 177-6131
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