사양

• Quantity: 1 bag (10 pcs)
• Channel type: N
• Maximum continuous drain current: 1.5 A
• Maximum drain-source voltage: 30 V
• Maximum drain-source resistance: 240 mΩ
• Maximum gate threshold voltage: 1.5 V
• Maximum gate-source voltage: -12 V, +12 V
• Package Type: TUMT
• Mounting Type: Surface Mounting
• Transistor Configuration: Single
• Channel Mode: Enhancement
• Category: Power MOSFET
• Maximum power consumption: 800 mW
• Typical turn-off delay time: 15 ns
• RoHS Compliance: Compliance
• Securities Code: 363-364
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