68-4088-75 Single Crystal SiC Wafer 6 inches/4H-N (Production Grade)
Fitur
- High quality single crystal SiC wafer
Spec
- Crystal Type: 4H-SiC
- Conductive Type/Dopant: N Type, Nitrogen
- grades: production
- Diameter: 149.5 mm~ 150.0 mm (6 ")
- Thickness: 350 μm±25 μm
- Off angle: 4 degrees +/- 0.5 degrees to <11-20 >
- Micropipe Density (MPD): not more than 2/cm-2
- Specific resistance: 0.015~0.024Ω-cm
- Orifla: {10-10} +/- 5.0 degrees, 47.5 mm +/- 2.0 mm length
- Edge exclusion area (EE): 3 mm from wafer edge
- Warpage: LTV≤2.5 μm, TTV≤6 μm, BOW≤25 μm, WARP≤35 μm
- Surface finish: Double-sided CMP (Si surface Ra≤0.2 nm)
- No Edge Cracks
- Polymorphism: None
- Edge chipping: width and length not greater than 0.2 mm
- Laser mark: On the C side (back side) side
- Packaging format: Single wafer case for each sheet
Ukuran paket：160×160×30 mm 100 g [Tentang Ukuran Paket]
| Perintah No. | 68-4088-75 | |
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| Harga standar |
JPY: 167,000
USD: 1,047.55
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Kuantitas | 1sheet | |
| Saham di Jepang |
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| Saham Pemasok |
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