63-7038-08 ［Dihentikan］Infineon 1200V 40A, SiC Schottky Diode, 2+Pin-Tab KE-220 IDH16G120C5XKSA1 IDH16G120C5XKSA1
Fitur
- thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
- Infineon thinQ! The fifth generation uses new thin wafer technology in SiC Schottky barrier diodes to improve thermal properties. SiC Schottky diode devices have features for high-voltage power semiconductors, such as high breakdown field strength and thermal conductivity for higher efficiency levels. This latest generation is suitable for communications SMPS, high-end servers, UPS systems, motor drives, solar inverters, PC silver boxes, lighting applications and more.
- Reducing EMI
Spec
- Kuantitas:1potongan
- Konfigurasi Diode: Tunggal
- Jumlah Elemen per Chip: 1
- Puncak Batasan Berulang: 1200 V
- Jenis Penpasang: Melalui Lubang
- Tipe Paket: KEPADA-220
- Teknologi Diode: SiC Schottky
- Jumlah Pin : 2+Tab
- Jatuh Tempo Maksimum: 2,85 V
- Puncak Arus Melengkung Maju Tidak Berulang: 140 A
- KODE No.:133-9929
| Perintah No. | 63-7038-08 | |
|---|---|---|
| Model No. | IDH16G120C5XKSA1 | |
| Harga standar |
JPY: 880
USD: 5.52
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Kuantitas | 1piece | |
|
||
| Saham di Jepang | - | |