63-7036-89 ［Dihentikan］BSC0901NSATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON Infineon BSC0901NSATMA1
Fitur
- Infineon OptiMOS3 Power MOSFET, up to 40 V
- OptiMOS products are packaged in a high-performance package for even the most challenging applications. This allows for maximum flexibility in limited space. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the next generation of stringent voltage regulation standards for computing applications.
- JEDEC1-compliant N channel, logic level superior gate charge x R DS (on) product (FOM) ultra-low on-resistance R DS (on) lead-free plating for technologically targeted applications optimized for DC/DC converters for fast switching MOSFETs and SMPS
Spec
- Kuantitas: 1set(5000potongan)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 100 A
- Voltase Sumber Drain Maksimum: 30 V
- Penyimpanan Sumber Drain Maksimum: 2,4 mΩ
- Batas Ambang Gerbang Maksimum: 2V
- Batas Ambang Gerbang Minimum: 1,2 V
- Voltase Sumber Gerbang Maksimum: +20 V
- Tipe Paket: TDSON
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 8
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 69 W
- Waktu Penundaan Saat Biasanya: 5,4 ns
- KODE No.:133-6584
| Perintah No. | 63-7036-89 | |
|---|---|---|
| Model No. | BSC0901NSATMA1 | |
| Harga standar |
JPY: 307,860
USD: 1,931.13
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Kuantitas | 1set(5000pieces) | |
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| Saham di Jepang | - | |