63-7020-73 ［Dihentikan］IRLR3636TRLPBF N-Channel MOSFET, 99 A, 60 V HEXFET, 3-Pin DPAK Infineon IRLR3636TRLPBF
Fitur
- N-Channel Power MOSFET 60 → 80 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Kuantitas:1tas(5potongan)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 99 A
- Voltase Sumber Drain Maksimum: 60 V
- Penyimpanan Sumber Drain Maksimum: 8,3 mΩ
- Batas Ambang Gerbang Maksimum: 2,5 V
- Batas Ambang Gerbang Minimum: 1V
- Voltase Sumber Gerbang Maksimum: -16 V, +16 V
- Tipe Paket: DPAK (TO-252)
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 3
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 143 W
- Waktu Penundaan Matikan Biasa: 43 ns
- KODE No.:130-1022
| Perintah No. | 63-7020-73 | |
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| Model No. | IRLR3636TRLPBF | |
| Harga standar |
JPY: 930
USD: 5.83
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Kuantitas | 1bag(5pieces) | |
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| Saham di Jepang | - | |