63-7020-71 [Dihentikan]Dual N-Channel MOSFET IRLHS6276TRPBF, 9,6 A, 20 V HEXFET, Infineon 6-Pin PQFN IRLHS6276TRPBF
Fitur
- N-Channel Power MOSFET 12 → 25 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Kuantitas:1tas(25 bagian)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 9,6 A
- Voltase Sumber Drain Maksimum: 20 V
- Penyimpanan Sumber Drain Maksimum: 62 mΩ
- Batas Ambang Gerbang Maksimum: 1,1 V
- Batas Ambang Gerbang Minimum: 0,5 V
- Voltase Sumber Gerbang Maksimum: -12 V, +12 V
- Tipe Paket: PQFN
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 6
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 6,6 W
- Suhu Operasi Minimum: -55 ° C
- KODE No.:130-1019
| Perintah No. | 63-7020-71 | |
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| Model No. | IRLHS6276TRPBF | |
| Harga standar |
JPY: 1,700
USD: 10.66
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Kuantitas | 1bag(25pieces) | |
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| Saham di Jepang | - | |
![[Dihentikan]Dual N-Channel MOSFET IRLHS6276TRPBF, 9,6 A, 20 V HEXFET, Infineon 6-Pin PQFN IRLHS6276TRPBF](https://aimg.as-1.co.jp/c/63/7020/71/63702071.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)