63-7020-39 ［Dihentikan］IRFH6200TRPBF N-Channel MOSFET, 100 A, 20 V HEXFET, 8-Pin PQFN Infineon IRFH6200TRPBF
Fitur
- N-Channel Power MOSFET 12 → 25 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Kuantitas:1tas(5potongan)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 100 A
- Voltase Sumber Drain Maksimum: 20 V
- Penyimpanan Sumber Drain Maksimum: 1,5 mΩ
- Batas Ambang Gerbang Maksimum: 1,1 V
- Batas Ambang Gerbang Minimum: 0,5 V
- Voltase Sumber Gerbang Maksimum: -12 V, +12 V
- Tipe Paket: PQFN
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 8
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 156 W
- Lebar: 5mm
- KODE No.:130-0983
| Perintah No. | 63-7020-39 | |
|---|---|---|
| Model No. | IRFH6200TRPBF | |
| Harga standar |
JPY: 890
USD: 5.54
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Kuantitas | 1bag(5pieces) | |
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| Saham di Jepang | - | |