63-7020-33 IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon IRFH5210TRPBF
Fitur
- N-Channel Power MOSFET 100 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a surface mount package with a lead. In addition, it includes a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Kuantitas:1tas(5potongan)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 10 A
- Voltase Sumber Drain Maksimum: 100 V
- Penyimpanan Sumber Drain Maksimum: 14,9 mΩ
- Batas Ambang Gerbang Maksimum: 4V
- Batas Ambang Gerbang Minimum: 2V
- Voltase Sumber Gerbang Maksimum: -20 V, +20 V
- Tipe Paket: PQFN
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 8
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 104 W
- Khas Biaya Gerbang @ Vgs: 40 nC @ 10 V
- KODE No.:130-0977
| Perintah No. | 63-7020-33 | |
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| Model No. | IRFH5210TRPBF | |
| Harga standar |
JPY: 2,500
USD: 15.68
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Kuantitas | 1bag(5pieces) | |
| Saham di Jepang |
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| Saham Pemasok |
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