63-7020-21 Dual N-Channel MOSFET IRF7907, 9,1 A, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7907TRPBF
Fitur
- Dual N-Channel Power MOSFETs Infineon
- Infineon dual power MOSFETs integrate two HEXFETR devices to provide a space-saving and cost-effective switching solution for high component density designs where substrate space is paramount. Various packaging options allow designers to choose a dual N-channel configuration.
Spec
- Kuantitas: 1tas(10bagian)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 9,1 A, 11 A
- Voltase Sumber Drain Maksimum: 30 V
- Penyimpanan Sumber Drain Maksimum: 13,7 mΩ, 20,5 mΩ
- Batas Ambang Gerbang Maksimum: 2,35 V
- Batas Ambang Gerbang Minimum: 1,35 V
- Voltase Sumber Gerbang Maksimum: -20 V, +20 V
- Tipe Paket: SOIK
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 8
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 2 W
- Seri : HEXFET
- KODE No.:130-0964
| Perintah No. | 63-7020-21 | |
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| Model No. | IRF7907TRPBF | |
| Harga standar |
JPY: 1,850
USD: 11.51
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Kuantitas | 1bag(10pieces) | |
| Saham di Jepang |
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