63-7020-13 ［Dihentikan］IRF7769L1TRPBF N-Channel MOSFET, 124 A, 100 V DirectFET, HEXFET, 9+Tab-Pin L8 Infineon IRF7769L1TRPBF
Fitur
- DirectFETR Power MOSFET, Infineon The DirectFETR power package uses surface-mounted power MOSFET packaging technology. The DirectFETR MOSFET is a solution that reduces the footprint designed for advanced switching applications while reducing the amount of energy loss.
- Industry's lowest on-resistance contained in the appropriate footprint Very low package resistance minimizes conductive loss Very efficient double-sided cooling significantly improves power density, cost and reliability. Low profile of only 0.7 mm
Spec
- Kuantitas: 1tas(2kepingan)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 124 A
- Voltase Sumber Drain Maksimum: 100 V
- Penyimpanan Sumber Drain Maksimum: 3,5 mΩ
- Batas Ambang Gerbang Maksimum: 4V
- Batas Ambang Gerbang Minimum: 2V
- Voltase Sumber Gerbang Maksimum: -20 V, +20 V
- Tipe Paket: L8
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 9 + Tab
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 125 W
- Waktu Penundaan Matikan Biasa: 92 ns
- KODE No.:130-0956
| Perintah No. | 63-7020-13 | |
|---|---|---|
| Model No. | IRF7769L1TRPBF | |
| Harga standar |
JPY: 920
USD: 5.72
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Kuantitas | 1bag(2pieces) | |
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| Saham di Jepang | - | |