63-7019-99 [Dihentikan]IRF3717 TRPBF N-Channel MOSFET, 20 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF3717TRPBF
Fitur
- N-Channel Power MOSFET 12 → 25 V, Infineon
- Infineon's discrete HEXFETR power MOSFET products include an N-channel device in a reed surface mount package and a form factor for almost any board layout or thermal design challenge. Benchmarking resistance across the range reduces conductive loss, enabling optimal system efficiency.
Spec
- Kuantitas: 1tas(10bagian)
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 20 A
- Voltase Sumber Drain Maksimum: 20 V
- Penyimpanan Sumber Drain Maksimum: 5,7 mΩ
- Batas Ambang Gerbang Maksimum: 2,45 V
- Batas Ambang Gerbang Minimum: 1,55 V
- Voltase Sumber Gerbang Maksimum: -20 V, +20 V
- Tipe Paket: SOIK
- Jenis Penpasang: Permukaan Gunung
- Jumlah Pin : 8
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 2,5 W
- Suhu Operasi Minimum: -55 ° C
- KODE No.:130-0941
| Perintah No. | 63-7019-99 | |
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| Model No. | IRF3717TRPBF | |
| Harga standar |
JPY: 1,230
USD: 7.65
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Kuantitas | 1bag(10pieces) | |
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| Saham di Jepang | - | |
![[Dihentikan]IRF3717 TRPBF N-Channel MOSFET, 20 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF3717TRPBF](https://aimg.as-1.co.jp/c/63/7019/99/63701999.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)