63-6981-91 C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed C3M0065100K
Fitur
- Silicon Carbide Power MOSFET, C3M Series, Cree Inc
- New C3M Silicon Carbide (SiC) MOSFET Technology Drain-to-Source Breakdown Voltage (Full Operating Temperature Range): 1000 V or More New Low Impedance Package (with Driver Source) Drain-to-Source Creepage Distance/Clearance: 8 mm Fast Switching at Low Power Capacitance High Voltage Avalanche Durability with Low ON Resistance Drain-to-Source High Speed Intrinsic Diode with Ultra-Low Reverse Recovery Loss
Spec
- Kuantitas:1potongan
- Tipe Saluran: N
- Maksimum Aliran Berkelanjutan: 35 A
- Voltase Sumber Drain Maksimum: 1000 V
- Penyimpanan Sumber Drain Maksimum: 90 mΩ
- Batas Ambang Gerbang Maksimum: 3,5 V
- Batas Ambang Gerbang Minimum: 1,8 V
- Voltase Sumber Gerbang Maksimum: -8 V, +19 V
- Tipe Paket: TO-247
- Jenis Penpasang: Melalui Lubang
- Jumlah Pin : 4
- Mode Saluran: Peningkatan
- Kategori: Power MOSFET
- Pengeluaran Daya Maksimum: 113,5 W
- Suhu Operasi Minimum: -55 ° C
- KODE No.:125-3453
| Perintah No. | 63-6981-91 | |
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| Model No. | C3M0065100K | |
| Harga standar |
JPY: 4,760
USD: 29.62
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Kuantitas | 1piece | |
| Saham di Jepang |
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