Infineon

IPT004N03LATMA1 N-Channel MOSFET, 300 A, 30 V OptiMOS, 8 + Tab-Pin HSOF Infineon　IPT004N03LATMA1

Infineon OptiMOS™ Power MOSFET Family. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)

Infineon

Infineon 1EDI20N12AFXUMA1 Dual Galvanic Isolated MOSFET Power Driver, -3.5 A, 4 A 8-Pin, DSO　1EDI20N12AFXUMA1

EiceDRIVER Isolated MOSFET and IGBT Gate Driver. Input to output isolation voltage Operating voltage with wide input Separate source and sink outputs Applications in AC Motor and Brushless DC Motor Drives

Infineon

Infineon TLV493D Series Current Sensor, 3.7 mA nominal current　TLV493DA1B6HTSA2

TLV493D-A1B6 3D Magnetic Sensors. The TLV493D-A1B6 series from Infineon is a family of 3D magnetic sensors. These devices offer accurate 3D sensing with very low power consumption. TLV493D-A1B6 magnetic sensors can detect the magnetic field in x, y and z directions. Suitable applications include; joysticks, gaming paddles, e-meters, control elements for white goods etc. Features and benefits: Integrated temperature sensing Low current consumption Operating supply voltage: 2.7 V to 3.5 V Digital output I2C interface

Infineon

BSP135H6327XTSA1 N-Channel MOSFET, 120 mA, 600 V Depletion SIPMOS, 3 + Tab-Pin SOT-223 Infineon　BSP135H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs

Infineon

BSP149H6327XTSA1 N-Channel MOSFET, 660 mA, 200 V Depletion SIPMOS, 3 + Tab-Pin SOT-223 Infineon　BSP149H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs

Infineon

SPW20N60S5FKSA1 N-Channel MOSFET, 20 A, 600 V CoolMOS S5, 3-Pin TO-247 Infineon　SPW20N60S5FKSA1

Infineon CoolMOS™S5 Power MOSFET Family

Infineon

Infineon BFR92PE6327HTSA1 NPN Transistor, 45 mA, 15 V, 3-Pin SOT-23　BFR92PE6327HTSA1

RF Bipolar Transistors, Infineon

Infineon

BSP89H6327XTSA1 N-Channel MOSFET, 350 mA, 240 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon　BSP89H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs

Infineon

SPW20N60C3FKSA1 N-Channel MOSFET, 21 A, 650 V CoolMOS C3, 3-Pin TO-247 Infineon　SPW20N60C3FKSA1

Infineon CoolMOS™C3 Power MOSFET

Infineon

SPW47N60C3FKSA1 N-Channel MOSFET, 47 A, 650 V CoolMOS C3, 3-Pin TO-247 Infineon　SPW47N60C3FKSA1

Infineon CoolMOS™C3 Power MOSFET

Infineon

Infineon BB640E6327HTSA1 Varactor, 62pF min, 19.5:1 Tuning Ratio, 30V, 2-Pin SOD-323　BB640E6327HTSA1

Varicap Diodes / Varactor Diodes, Infineon. Variable Capacitance Diodes, commonly known as Varicap, Varactor or Tuning diodes, are useful in many applications where a change in capacitance derived from a change in voltage is required. They are suitable for use in a wide range of application, including RF tuning, Voltage Controlled Oscillators and filters, Frequency Synthesizers and Multipliers.

Infineon

IRFZ34NPBF N-Channel MOSFET, 29 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRFZ34NPBF

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRFZ44NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRFZ44NPBF

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRF3205PBF N-Channel MOSFET, 110 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRF3205PBF

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRF4905PBF P-Channel MOSFET, 74 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRF4905PBF

P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRF3710PBF N-Channel MOSFET, 57 A, 100 V HEXFET, 3-Pin TO-220AB Infineon　IRF3710PBF

N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRFZ48NPBF N-Channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRFZ48NPBF

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRF640NPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin TO-220AB Infineon　IRF640NPBF

N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRLZ44NPBF N-Channel MOSFET, 47 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRLZ44NPBF

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

Infineon IR2111PBF Dual Half Bridge MOSFET Power Driver, 0.5A 8-Pin, PDIP　IR2111PBF

MOSFET ; IGBT Gate Drivers, Half-Bridge, Infineon. Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in half bridge configurations.

Infineon

IRF530NPBF N-Channel MOSFET, 17 A, 100 V HEXFET, 3-Pin TO-220AB Infineon　IRF530NPBF

N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRFZ24NPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRFZ24NPBF

N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon

IRF9Z24NPBF P-Channel MOSFET, 12 A, 55 V HEXFET, 3-Pin TO-220AB Infineon　IRF9Z24NPBF

P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon