67-6458-39 Wafer with 4 inch W (Sputtered) Film (for 50 nm Research [P (100), 1-100 Ω] Single-sided Mirror DF Product, 1 Piece Included
![Wafer with 4 inch W (Sputtered) Film (for 50 nm Research [P (100), 1-100 Ω] Single-sided Mirror DF Product, 1 Piece Included](https://aimg.as-1.co.jp/c/67/6458/39/67644507.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)
Features
- We have a proven track record for research and development, and offer wafers made from high-purity materials from small quantities.
Spec
- Size: 4-inch silicon wafer
- W (Tungsten) [Sputtering] Film Thickness: 50nn Aim (with Data)
- Diameter (mm): 100.0±0.2
- Wafer thickness (μm): 525±25
- Manufacturing method: CZ method
- Conductive Type: P Type
- Face Bearing: 100
- Resistance value (Ω · cm): 1~100
- OF length (mm): 32.5±2.5
- Face State: Mirror/Etched
- particles: dust free
- TTV(μm):≦20
- Quantity: 1 (1 box)
- *custom-made product
- We also have a variety of other products, such as laminated films and patterning, so please feel free to contact us.
- Various shapes and surface treatments are possible (Examples: Etching, Counterboring, Drilling, Oxidized Wafers).
- It is possible to match the specific resistivity and wafer thickness you desire.
- *Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.
- *We do not ask any questions about the products with film unevenness or film thickness.
Package size：200×210×260 mm 1 kg [About Package size]
| Order No. | 67-6458-39 | |
|---|---|---|
| Standard price |
JPY: 237,300
USD: 1,487.50
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1sheet/box | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|
Product Catalog
| Catalog Name | Page |
|---|---|
| AS ONE Catalog 2025 [Instruments for Laboratory] | 1939 |