67-3018-51 Silicone Nitride Heat Dissipation Plate (114 x 114 x 0.32 mm) for Research, 10 pcs 

Features

  • We have a proven track record for research and development, and offer wafers made from high-purity materials from small quantities.

Spec

  • Size: 114 x 114 x 0.32 mm
  • Surface roughness: ≤0.8 Ra
  • Temporary specific gravity: 3.20± 0.05 g/cm3
  • Elastic modulus: 300~320Gpa
  • Poisson's ratio: ≤0.29 - Vickers hardness ≥14.2Gpa
  • Linear thermal expansion coefficient (25 °C to 500 °C): 3.0~3.2 10-6/°C
  • Fracture Toughness: 6.0~7.0 MPa
  • Bending strength (three point bending): 700~800 Mpa
  • Thermal conductivity (25 °C): ≥85 W/(m · k)
  • Quantity: 1 box (10 sheets) * 1 case per 1 sheet
  • *custom-made product
  • The azimuth (cutting angle), OF azimuth angle tolerance, and thickness tolerance can be reduced and processed with high precision, enabling accurate groove formation during etching.
  • Various shapes and surface treatments are possible (Examples: gouging, drilling, wafer with oxide film).
  • It is possible to match the specific resistivity and wafer thickness you desire.
  • *Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.
  • *In the case of a special order order, please coordinate with the supplier.
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Package size:200×210×260 mm 1.5 kg  [About Package size]

Order No. 67-3018-51
Standard price JPY: 116,100 USD: 728.27
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity 1box(10sheets)
Stock in Japan
Supplier Stock

Product Catalog

Catalog Name Page
AS ONE Catalog 2025 [Instruments for Laboratory] 1939