67-3011-42　2 inch INP Wafer (Prime) Research [S-C-N/S (100)] Single-sided Polish 10 pcs　

Features

We have a proven track record for research and development, and offer wafers made from high-purity materials from small quantities.

Grade: Prime
Materials: InP
Condition Type/Dopant: S-C-N/S
Diameter: 50.05 +/- 0.2 mm
Direction: (100) +/- 0.5 deg.
flat operation: EJ
Primary Orifra: (0-1-1)
First OF Length: 16±2 mm
Secondary Orifra: (0-11)
Second OF length: 7 +/- 1 mm
Carrier concentration: 2E18~8E18cm−3
Resistivity: 0.6 to 3~2.5E-3ohm · cm
Mobility: 1000~2000 cm2/V・sec
EPD:Ave<:5000cm−2
laser marks: Back side major flat
Edge rounding: 0.25mmR (Conform to SEMI Standards)
Thickness: 325~375 μm
TTV:Max:10μm
TIR:Max:10μm
BOW:Max:10μm
Warp:Max:15μm
Face State: Side1: PolishedSide2: Etched
packages: individual container filled with N2
Epi-ready:Yes
Quantity: 10 sheets (1 box)
*custom-made product
The azimuth (cutting angle), OF azimuth angle tolerance, and thickness tolerance can be reduced and processed with high precision, enabling accurate groove formation during etching.
Various shapes and surface treatments are possible (Examples: gouging, drilling, wafer with oxide film).
It is possible to match the specific resistivity and wafer thickness you desire.
*Although this product is manufactured and processed using crystal materials for semiconductors, it is not possible to verify the purity of the material.

Package size：200×210×190 mm　1 kg　 [About Package size]

Order No.	67-3011-42
Standard price	JPY: 467,300 USD: 2,931.25 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1box(10sheets)
Stock in Japan
Supplier Stock

Catalog Name	Page
AS ONE Catalog 2025 [Instruments for Laboratory]	1939