Spec

• 20% off for now!! Summary
• It is a teaching material for device modeling of power MOSFETs, which are the main players in power electronics.
• The power MOSFET consists of the body MOSFET and the body diode.
• Each device modeling point, cautionary note, and optimal modeling process are explained.
• Please use it to understand power MOSFETs.　
• Table of Contents
• 1.　About Device Modeling
• 2.　Device modeling of power MOSFETs
• Power MOSFET
• 2.1 How to determine the constants of L, W and TOX
• How to extract 2.2 KP
• 2.3 How to extract VTO
• 2.4 How to extract RD
• 2.5 How to Extract RDS
• 2.6 How to extract CGSO and CGDO
• How to extract 2.7 MJ, PB
• 2.8 How to extract RG
• body diode
• 2.9 Extraction of IS, N, RS and IKF
• 2.10 How to extract TT (trj)
• 2.11 How to Describe a Subcircuit
• 3.　How to evaluate a device model
• Power MOSFET
• 3.1 Vgs-ld characteristic evaluation analysis simulation
• 3.2 Rds (on) Resistance Evaluation Analysis Simulation
• 3.3 Gate charge characteristic evaluation analysis simulation
• 3.4 Capacity characteristics (VdS vs.　Cbd)Evaluation analysis simulation
• 3.5 td (on) Evaluation Analysis Simulation
• body diode
• 3.6 Vsd vs.　Evaluation analysis simulation of ls characteristics
• 3.7 Evaluation Analysis Simulation of Reverse Recovery Characteristics
• 4.　About model weaknesses (gate charge characteristics)
• 5.　About the thermal device model
• 6.　Q & A
•