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• 20% off for now!! Summary
• In the parameter model of the diode, the reverse recovery property is represented by the parameter TT, one, and the reverse recovery property is not represented faithfully.
• In order to faithfully reproduce the reverse recovery characteristics, an equivalent circuit model must be adopted.
• The application of this model is on the circuit, where switching time affects, especially in power electronics, body diodes in power MOSFETs, FWDs in IGBTs.
• Please use it to introduce the equivalent circuit model and understand the equivalent circuit model.
• Also included are the results of the latest research on the current reduction rate (didt) model and the thermal device model.　
• Table of Contents
• 1.　What is Device Modeling?
• 2.　Device modeling
• 2.1 Differences between Diode's Parameter and Behavior Models
• 2.2 How to think about the behavior model (5 methods: devised be-technology)
• 2.3 How to extract the parameters of the forward characteristics
• 2.4 How to Extract the Parameters of Capacitive Properties
• 2.5 How to extract reverse recovery characteristics
• 3.　How to evaluate a device model
• 3.1 Evaluation Analysis Simulation of Forward Characteristics
• 3.2 Evaluation Analysis Simulation of Capacity Characteristics
• 3.3 Evaluation Analysis Simulation of Reverse Recovery Characteristics
• 4.　Thermal Device Modeling
• 5.　Device modeling exercise for diode model
• 5.1 Device Modeling
• 5.2 Evaluation circuit simulation
• 6.　Noise Analysis Simulation in FCC Circuits
• 6.1 FCC Circuit Method
• 6.2 Concept of circuit analysis simulation
• 6.3 Incorporating device models and circuit analysis simulation
• 7.　Introduction of the didt model of radio wave loss
• 8.　Q & A
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