64-2794-89 SQD40031EL_GE3 P-Channel MOSFET, 100 A, 30 V TrenchFET, 3 + Tab-Pin DPAK Vishay Siliconix SQD40031EL_GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:5 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:TO-252
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:136 W
- Typical Turn-Off Delay Time:126 ns
- CODE No.:178-3950
| Order No. | 64-2794-89 | |
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| Model No. | SQD40031EL_GE3 | |
| Standard price |
JPY: 2,980
USD: 18.68
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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