64-2794-87 SiZ350DT-T1-GE3 Dual N-Channel MOSFET, 30 A, 30 V TrenchFET, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:30 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:9 mΩ
- Maximum Gate Threshold Voltage:1V
- Minimum Gate Threshold Voltage:2.4V
- Maximum Gate Source Voltage:-12 V, +16 V
- Package Type:PowerPAIR 3 x 3
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:16.7 W
- Maximum Operating Temperature:+150 °C
- CODE No.:178-3944
| Order No. | 64-2794-87 | |
|---|---|---|
| Model No. | SiZ350DT-T1-GE3 | |
| Standard price |
JPY: 2,250
USD: 14.10
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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