64-2794-86 ［Discontinued］SQA470EEJ-T1_GE3 N-Channel MOSFET, 2.25 A, 30 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SQA470EEJ-T1_GE3
Spec
- Quantity:1bag(25pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.25 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:90 mΩ
- Maximum Gate Threshold Voltage:1.6V
- Minimum Gate Threshold Voltage:0.6V
- Maximum Gate Source Voltage:±12 V
- Package Type:SC-70
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:13.6 W
- Minimum Operating Temperature:-55 °C
- CODE No.:178-3938
| Order No. | 64-2794-86 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Model No. | SQA470EEJ-T1_GE3 | |||||||||||||||
| Standard price |
JPY: 1,290
USD: 8.09
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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64-2794-86 ［Discontinued］SQA470EEJ-T1_GE3 N-Channel MOSFET, 2.25 A, 30 V TrenchFET, 6-Pin SC-70 Vishay Siliconix SQA470EEJ-T1_GE3Spec
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