64-2794-85 [Discontinued]SQM40022E_GE3 N-Channel MOSFET, 150 A, 40 V TrenchFET, 3 + Tab-Pin D2PAK Vishay Siliconix SQM40022E_GE3
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:150 A
- Maximum Drain Source Voltage:40 V
- Maximum Drain Source Resistance:3 mΩ
- Maximum Gate Threshold Voltage:2.5V
- Minimum Gate Threshold Voltage:3.5V
- Maximum Gate Source Voltage:±20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Dimensions:10.67 x 4.83 x 11.3mm
- CODE No.:178-3936
| Order No. | 64-2794-85 | |
|---|---|---|
| Model No. | SQM40022E_GE3 | |
| Standard price |
JPY: 2,020
USD: 12.66
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SQM40022E_GE3 N-Channel MOSFET, 150 A, 40 V TrenchFET, 3 + Tab-Pin D2PAK Vishay Siliconix SQM40022E_GE3](https://aimg.as-1.co.jp/c/64/2794/85/64279485.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)