64-2794-84 SiDR392DP-T1-GE3 N-Channel MOSFET, 100 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix SiDR392DP-T1-GE3
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:100 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:900 μΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:+20 V, +6 V
- Package Type:SO-8
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Transistor Material:Si
- CODE No.:178-3934
| Order No. | 64-2794-84 | |
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| Model No. | SiDR392DP-T1-GE3 | |
| Standard price |
JPY: 3,420
USD: 21.44
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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